Novel Synthesis of Silicon Carbide Nanowires from e-Waste

In this study a novel new process for the synthesis of silicon carbide nanowires from a voluminous and problematic waste stream, e-waste, is verified. Silicon carbide nanowires (SiC NWs) with diameters of 30-200 nm and length up to 10 mu m were synthesized via the carbothermal reduction of two electronic waste (e-waste) components. The glass fraction of an obsolete computer monitor (GCM) was used as a source of silica and the computer's plastic shell (CPS) as a carbon source. After identifying the composition of the GCM and the CPS, a stoichiometric mixture of both components was prepared and subsequently heat-treated at 1550 degrees C in an inert atmosphere. The resulting product was characterized, and results confirmed the formation of three distinct morphologies of SiC NWs; smooth surface NWs, bamboo-like NWs, and hexagonal prism NWs with high-density stacking faults (SF). According to the N-2 physisorption analysis, the SiC NWs showed mesoporous characteristics with a specific surface area of 51.4 m(2)/g and pore size distribution ranging from 2 to 15 nm. Given the growing global burden of e-waste, we have demonstrated a new low cost means of synthesizing SiC NWs and the use of a problematic waste, delivering potential economic and environmental benefits.