4.5 Article

A 860 kHz grounded memristor emulator circuit

出版社

ELSEVIER GMBH
DOI: 10.1016/j.aeue.2016.12.015

关键词

Memristor emulator; Pinched hysteresis loop; Nonlinear resistor

资金

  1. National Council for Science and Technology (CONACyT), Mexico [222843]
  2. Universidad Autonoma de Tlaxcala (UATx), Tlaxcala de Xicohtencatl, TL, Mexico [CACyPI-UATx-2015]
  3. Program to Strengthen Quality in Educational Institutions [P/PROFOCIE-2015-29MSU0013Y-02]

向作者/读者索取更多资源

A grounded memristor emulator circuit operating from 16 Hz to 860 kHz is proposed. The emulator circuit is built around a plus-type second generation current conveyor, a four quadrant analog multiplier, a capacitor and a resistor. Two DC voltage sources are used for controlling the zero crossing of the frequency-dependent pinched hysteresis loop over a broad range of amplitude Am of the input signal, and principally when the memristor emulator circuit is operating at high-frequency. It describes in detail the derivation of the behavioral model of the proposed emulator circuit, including parasitic elements and showing that the charge-controlled memductance is a first-order function. Furthermore, a design guide to choose the numerical value of each discrete element in function of the operating frequency and Am is also given. The emulator circuit is built with off-the-shelf devices, and numerical results obtained by means of the behavioral model are compared with HSPICE simulations and experimental tests, showing good agreement among all them in a wide range of frequencies. This is against with some memristor emulator circuit available in the literature which present a good behavior at low-frequency and however, the zero crossing of the pinched hysteresis loop is deviated when the operating frequency increases. It is worth to stress that for the best knowledge of the authors, this is the first memristor emulator circuit that is operating to high-frequency. Moreover, the proposed emulator circuit can be configured as decremental or incremental memristor in order to be used in future applications such as cellular neural networks, modulators, sensors, chaotic systems, relaxation oscillators, nonvolatile memory devices and programmable analog circuits. (C) 2016 Elsevier GmbH. All rights reserved.

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