期刊
COMPOSITE STRUCTURES
卷 163, 期 -, 页码 13-20出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.compstruct.2016.12.019
关键词
Finite element method; Functionally graded materials; Piezoelectric semiconductors
资金
- Slovak Science and Technology Assistance Agency [APVV-14-0216]
- National Science Council of Taiwan [103-2923-E-002-004-MY2, 104-2811-E-002-012]
The finite element method is developed for 3-D general boundary value problems for a piezoelectric semiconductor with functionally graded material properties. The electron density and electric current are additionally considered in the constitutive equations for piezoelectric semiconductors. A general variation of material properties with Cartesian coordinates is treated in the numerical analyses. The influence of material parameter gradation and initial electron density is investigated in the static case. Numerical results are presented for a 3-D beam under a static and impact mechanical load. Transversely isotropic material properties are considered in this study. (C) 2016 Elsevier Ltd. All rights reserved.
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