4.6 Article

Fabrication of a non-enzymatic glucose sensor field-effect transistor based on vertically-oriented ZnO nanorods modified with Fe2O3

期刊

ELECTROCHEMISTRY COMMUNICATIONS
卷 77, 期 -, 页码 107-111

出版社

ELSEVIER SCIENCE INC
DOI: 10.1016/j.elecom.2017.03.006

关键词

Field-effect transistor; Non-enzymatic; Glucose sensor; ZnO nanorod; Iron oxide

资金

  1. National Leading Research Laboratory program through the National Research Foundation (NRF) of Korea - Ministry of Science, ICT & Future Planning [NRF-2016R1A2B2016665]
  2. National Research Foundation of Korea [2016R1A2B2016665] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Herein, we report a non-enzymatic glucose sensor field-effect transistor (FET) based on vertically-oriented zinc oxide nanorods modified with iron oxide (Fe2O3-ZNRs), Compared with ZnO-based non-enzymatic glucose sensors, which show poor sensing performances, modification of ZnO with Fe2O3 dramatically enhances the sensing behavior of the fabricated non-enzymatic FET glucose sensor due to the excellent electrocatalytic nature of Fe2O3. The fabricated non-enzymatic FET sensor showed excellent catalytic activity for glucose detection under optimized conditions with a linear range up to 18 mM, detection limits down to-12 phi, excellent selectivity, good reproducibility and long-term stability. Moreover, the fabricated FET sensor detected glucose in freshly drawn mouse whole blood and serum samples. The developed FET sensor has practical applications in real samples and the solution-based synthesis process is cost effective. (C) 2017 Elsevier B.V. All rights reserved.

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