期刊
ACS NANO
卷 11, 期 4, 页码 4067-4076出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b00749
关键词
Zn2SnO4 nanowires; ZnO quantum dots; photodetectors; flexible electronics; image sensors
类别
资金
- National Natural Science Foundation of China [61377033, 61625404, 61574132, 61504136]
- Hong Kong Research Grant Council [16237816]
- Innovation and Technology Commission [ITS/362/14FP]
- Beijing Natural Science Foundation [4162062]
- CAS [QYZDY-SSW-JSC004]
- Center for 1D/2D Quantum Materials
- State Key Laboratory on Advanced Displays and Optoelectronics at HKUST
Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn2SnO4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 X 10(4)), specific detectivity (up to 9.0 X 10(17) Jones), photoconductive gain (up to 1.1 X 10(7)), fast response, and excellent stability. Compared with a pristine Zn2SnO4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron hole pairs at the interfaces between ZnO quantum dots and a Zn2SnO4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 X 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn2SnO4 nanowires, these decorated nano wires may find broad applications in future flexible and wearable electronics.
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