A Study on an Oxygen Vacancy and Conductivity of Oxide Thin Films Deposited by RF Magnetron Sputtering and Annealed in a Vacuum

Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type SnO2. Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide (SnO2) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at 150 degrees C., ZnO annealed at 200 degrees C and SnO2 annealed at 100 degrees C. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150.. This is the middle level in compared with those of ZnO annealed at 200 degrees C and SnO2 annealed at 100 degrees C.. The electrical properties of ZTO followed those of SnO2, which acts a an enhancer in the oxide semiconductor.