4.1 Article

Recent progress in synthesis of two-dimensional hexagonal boron nitride

期刊

JOURNAL OF SEMICONDUCTORS
卷 38, 期 3, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/38/3/031003

关键词

hexagonal boron nitride; two-dimensional materials; applications; synthesis

资金

  1. National Natural Science Foundation of China [61376007, 61674137]
  2. National Key Research and Development Program of China [2016YFB0400802]

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Two-dimensional (2D) materials have recently received a great deal of attention due to their unique structures and fascinating properties, as well as their potential applications. 2D hexagonal boron nitride (2D hBN), an insulator with excellent thermal stability, chemical inertness, and unique electronic and optical properties, and a band gap of 5.97 eV, is considered to be an ideal candidate for integration with other 2D materials. Nevertheless, the controllable growth of high-quality 2D h-BN is still a great challenge. A comprehensive overview of the progress that has been made in the synthesis of 2D h-BN is presented, highlighting the advantages and disadvantages of various synthesis approaches. In addition, the electronic, optical, thermal, and mechanical properties, heterostructures, and related applications of 2D h-BN are discussed.

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