期刊
JOURNAL OF SEMICONDUCTORS
卷 38, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/38/3/031003
关键词
hexagonal boron nitride; two-dimensional materials; applications; synthesis
资金
- National Natural Science Foundation of China [61376007, 61674137]
- National Key Research and Development Program of China [2016YFB0400802]
Two-dimensional (2D) materials have recently received a great deal of attention due to their unique structures and fascinating properties, as well as their potential applications. 2D hexagonal boron nitride (2D hBN), an insulator with excellent thermal stability, chemical inertness, and unique electronic and optical properties, and a band gap of 5.97 eV, is considered to be an ideal candidate for integration with other 2D materials. Nevertheless, the controllable growth of high-quality 2D h-BN is still a great challenge. A comprehensive overview of the progress that has been made in the synthesis of 2D h-BN is presented, highlighting the advantages and disadvantages of various synthesis approaches. In addition, the electronic, optical, thermal, and mechanical properties, heterostructures, and related applications of 2D h-BN are discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据