期刊
EPJ PHOTOVOLTAICS
卷 8, 期 -, 页码 -出版社
EDP SCIENCES S A
DOI: 10.1051/epjpv/2017001
关键词
-
资金
- French ANR SupersansPlomb project
The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.
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