Unusually High and Anisotropic Thermal Conductivity in Amorphous Silicon Nanostructures

Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (kappa), which is similar to 1 W-center dot m(-1) K-1 for a-Si. However, recent work suggested that kappa of micrometer-thick a-Si films can be greater. than 3 W.m(-1) K-1, which is contributed to by propagating vibrational modes, referred to as propagons. However, precise determination of kappa in a-Si has been elusive. Here, we used structures of a-Si nanotubes and suspended a-Si films that enabled precise in plane thermal conductivity (kappa(parallel to)) measurement within a wide thickness range of 5 nm to 1.7 mu m. We showed unexpectedly high kappa(parallel to) in a-Si nanostructures, reaching similar to 3.0 and 5.3 W.m(-1) K-1 at similar to 100 nm and 1.7 mu m, respectively. Furthermore, the measured K-parallel to is significantly higher than the cross-plane kappa on the same films. This unusually high and anisotropic thermal conductivity in the amorphous Si nanostructure manifests the surprisingly broad propagon mean free path distribution, which is found to range from 10 nm to 10 mu m, in the disordered and atomically isotropic structure. This result provides an unambiguous answer to the century-old problem regarding mean free path distribution of propagons and also sheds light on the design and performance of numerous a-Si based electronic and optoelectronic devices.