4.6 Review

High efficiency phototransducers based on a novel vertical epitaxial heterostructure architecture (VEHSA) with thin p/n junctions

期刊

JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 50, 期 17, 页码 1-22

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aa60a6

关键词

heterostructures; photovoltaics; p/ n junctions; phototransducer; VEHSA; III-V; epitaxy

向作者/读者索取更多资源

This review outlines a series of developments in the design, modelling and growth of multijunction laser power converters, including several observations of multi-junction GaAs monolithic vertical epitaxial heterostructure architecture devices with astonishing monochromatic optical to electrical conversion efficiencies in the 65- 70% range. Experimental data is presented for devices ranging from single up to 20 p/n junctions, generally exhibiting weak dependence on source detuning which serves as evidence for strong photon recycling effects in these devices. Considerations for further design optimizations are discussed in detail, as well as the future direction of this research including the growth of devices with up to 100 subcells.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据