4.8 Article

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

期刊

ACS NANO
卷 11, 期 5, 页码 4710-4718

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b00628

关键词

field-effect transistor; oxide semiconductor; quasi-two-dimensional; pH sensors; glucose sensors

资金

  1. National Science Foundation [ECCS-1202231, CHE-1230598]
  2. National Science Foundation (ECCS program under Engineering Division)
  3. MISP (Ministry of Science, ICT & Future Planning), Korea under National program for Excellence in Software program [R7718-16-1005]
  4. Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [2015-0-00938-003] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Ultrasensitive field-effect transistor-based biosensors using quasi two -dimensional metal oxide semiconductors were demonstrated. Quasi-two-dimensional low-dimensional metal oxide semiconductors were highly sensitive to electrical perturbations at the semiconductor bio interface and showed competitive sensitivity compared with other nanomaterial-based biosensors. Also, the solution process made our platform simple and highly reproducible, which was favorable compared with other nanobioelectronics. A quasi-two-dimensional In2O3-based pH sensor showed a small detection limit of 0.0005 pH and detected the glucose concentration at femtomolar levels. Detailed electrical characterization unveiled how the device's parameters affect the biosensor sensitivity, and lowest detectable charge was extrapolated, which was consistent with the experimental data.

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