期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 50, 期 15, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6463/aa5c6a
关键词
MoS2; photoluminescence; mobility; oxygen plasma; defects
资金
- NSFC [61422503, 61376104]
- open research funds of the Key Laboratory of MEMS of Ministry of Education (SEU, China)
- Fundamental Research Funds for the Central Universities
Two-dimensional (2D) molybdenum disulfide (MoS2) is considered as a promising candidate for electronic and optoelectronic devices. However, structural defects in MoS2 are widely reported and can greatly degrade its electrical and optical properties. In this work, we investigate the structural defects in MoS2 by low temperature photoluminescence (PL) spectroscopy and study their effects on the electrical performance, i.e. carrier mobility. We also adopt the mild oxygen plasma treatment to repair the structural defects and found that the carrier mobility of monolayer MoS2 can be greatly improved. This work would therefore offer a practical route to improve the performance of 2D dichalcogenide-based electrical and optoelectronic devices.
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