期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 14, 页码 12750-12758出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b01666
关键词
printed thin film transistors; n-type and p-type; ethanolamine; sorted semiconducting carbon nanotube; selective polarity conversion; printed CMOS inverters
资金
- Strategic Priority Research Program of the Chinese Academy of Science [XDA09020201]
- National Key Research and Development Program of China [2016YFB0401100]
- Key Research Program of Frontier Science of Chinese Academy of Sciences [QYZDB-SSW-SLH031]
- National Natural Science Foundation of China [91623104, 61604167]
- Science and Technology Program of Guangdong Province, China [2016B090906002]
- Basic Research Programme of Suzhou Institute of Nano-Tech and Nano-Bionics [Y5AAY21001]
- Collaborative Innovation Center of Suzhou Nano Science Technology
- Priority Academic Program Development of Jiangsu Higher Education Institutions
The fabrication of printed high-performance and environmentally stable n-type single-walled carbon nanotube (SWCNT) transistors and their integration into complementary (i.e., complementary metal-oxide-semiconductor, CMOS) circuits are widely recognized as key to achieving the full potential of carbon nanotube electronics. Here, we report a simple, efficient, and robust method to convert the polarity of SWCNT thin-film transistors (TFTs) using cheap and readily available ethanolamine as an electron doping agent. Printed p-type bottom-gate SWCNT TFTs can be selectively converted into n-type by deposition of ethanolamine inks on the transistor active region via aerosol. jet printing. Resulted n-type TFTs show excellent electrical properties with an on/off ratio of 106, effective mobility up to 30 cm(2)V(-1) s(-1) small hysteresis, and small subthreshold swing (90-140 mV dec(-1)), which are superior compared to the original p-type SWCNT devices. The n-type SWCNT TFTs also show good stability in air, and any deterioration of performance due to shelf storage can be fully recovered by a short low-temperature annealing. The easy polarity conversion process allows construction of CMOS circuitry. As an example, CMOS inverters were fabricated using printed p-type and n-type TFTs and exhibited a large noise margin (50 and 103% of 1/2 V-dd = 1 v) and a voltage gain as high as 30 (at V-dd = 1 V). Additionally, the CMOS inverters show full rail-to-rail output voltage swing and low power dissipation (0.1 mu W at V-dd = 1 V). The new method paves the way to construct fully functional complex CMOS circuitry by printed TFTs.
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