期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 13, 页码 11704-11710出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b16559
关键词
tantalum oxide; Poole-Frenkel conduction; threshold switch; negative differential resistance; thermal runaway
资金
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
- NSF [DMR 1409068]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1409068] Funding Source: National Science Foundation
Pulsed and quasi-static current voltage (I-V) characteristics of threshold switching in TiN/TaOx/TiN crossbar devices were measured as a function of stage temperature (200-495 K) and oxygen flow during the deposition of TaOx. A comparison of the pulsed and quasi static characteristics in the high resistance part of the I V revealed that Joule self-heating significantly affected the current and was a likely source of negative differential resistance (NDR) and thermal runaway. The experimental quasi-static I-V's were simulated using a finite element electro-thermal model that coupled current and heat flow electro-thermal model that coupled current and heat flow and incorporated an external circuit with an appropriate load resistor. The simulation reproduced the experimental I-V including the OFF-state at low currents and the volatile NDR region. In the NDR region, the simulation predicted spontaneous current constriction forming a small-diameter hot conducting filament with a radius of 250 nm in a 6 mu m diameter device.
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