4.8 Article

Electronic Properties of Graphene-PtSe2 Contacts

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 18, 页码 15809-15813

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b00012

关键词

graphene; platinum diselenide; contact; band bending; heterostructure

资金

  1. King Abdullah University of Science and Technology (KAUST)
  2. Qatar National Research Fund (Qatar Foundation) [NPRP 7-665-1-125]

向作者/读者索取更多资源

In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe2 and a p-type Schottky contact with bilayer PtSe2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.

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