期刊
ACS NANO
卷 11, 期 4, 页码 4124-4132出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b00861
关键词
carbon nanotube; complementary metal-oxide semiconductor; field-effect transistors; medium-scale integrated circuits; network film
类别
资金
- National Key Research & Development Program [2016YFA0201901, 2016YFA0201902]
- National Science Foundation of China [61376126, 61321001, 61427901]
- Beijing Municipal Science and Technology Commission [D161100002616001-3]
Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 mu m. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.
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