期刊
AIP ADVANCES
卷 7, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4985722
关键词
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资金
- National Research and Development Agency
- New Energy and Industrial Technology Development Organization (NEDO)
- Ministry of Economy, Trade and Industry (METI), Japan
- Grants-in-Aid for Scientific Research [26246017] Funding Source: KAKEN
We have investigated the performance of 10-layer stacked GaSb/GaAs quantum dot (QD) and quantum ring (QR) solar cells (SCs) having a type-II band alignment. For both SCs, the external quantum efficiency (EQE) increased in the longer wavelength region beyond GaAs bandedge wavelength of lambda > 870 nm due to an additive contribution from GaSb/GaAs QD or QR layers inserted in the intrinsic region of p-i-n SC structure. The EQE of GaSb/GaAs QRSC was higher than that of QDSC at room temperature and the photoluminescence intensity from GaSb/GaAs QRs was stronger compared with GaSb/GaAs QDs. These results indicate that crystal quality of GaSb/GaAs QRs is superior to that of GaSb/GaAs QDs. Furthermore, a photocurrent production due to two-step photo-absorption via GaSb/GaAs QD states or QR states, Delta EQE was measured at low temperature and the ratio of two-step absorption to total carrier extraction defined as Delta EQE / (Delta EQE + EQE), was higher for GaSb/GaAs QRSC than that of QDSC. The ratio of GaSb/GaAs QRSC exceeds 80% over the wavelength region of lambda = 950 - 1250 nm. This suggests that two-step absorption process is more dominant for carrier extraction from GaSb/GaAs QR structure. (C) 2017 Author(s).
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