相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Far-UV Annealed Inkjet-Printed In2O3 Semiconductor Layers for Thin Film Transistors on a Flexible Polyethylene Naphthalate Substrate
Jaakko Leppaniemi et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors
Rohit Abraham John et al.
CHEMISTRY OF MATERIALS (2016)
Reduction of activation temperature at 150°C for IGZO films with improved electrical performance via UV-thermal treatment
Young Jun Tak et al.
JOURNAL OF INFORMATION DISPLAY (2016)
Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors
Mardhiah M. Sabri et al.
JOURNAL OF MATERIALS CHEMISTRY C (2015)
Multifunctionality of Giant and Long-Lasting Persistent Photoconductivity: Semiconductor-Conductor Transition in Graphene Nanosheets and Amorphous InGaZnO Hybrids
Min-Kun Dai et al.
ACS PHOTONICS (2015)
Light induced instability mechanism in amorphous InGaZn oxide semiconductors
John Robertson et al.
APPLIED PHYSICS LETTERS (2014)
Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
Shinya Aikawa et al.
APPLIED PHYSICS LETTERS (2013)
Mechanism of H2O2 Decomposition on Transition Metal Oxide Surfaces
Claudio M. Lousada et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2012)
Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors
Wei-Tsung Chen et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and SiO2 Gate Dielectrics
Kwang Hwan Ji et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Kinetics, Mechanism, and Activation Energy of H2O2 Decomposition on the Surface of ZrO2
Claudio M. Lousada et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2010)
High-Performance Solution-Processed Amorphous Zinc-Indium-Tin Oxide Thin-Film Transistors
Myung-Gil Kim et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2010)
Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory
Toshio Kamiya et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Anatoxin-a degradation by Advanced Oxidation Processes: Vacuum-UV at 172 nm, photolysis using medium pressure UV and UV/H2O2
Atefeh Afzal et al.
WATER RESEARCH (2010)
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
A. Suresh et al.
APPLIED PHYSICS LETTERS (2008)
Improving the property of ZnO nanorods using hydrogen peroxide solution
Wen-Yan Su et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Decomposition of hydrogen peroxide at water-ceramic oxide interfaces
A Hiroki et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2005)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
Photoinduced surface wettability conversion of ZnO and TiO2 thin films
RD Sun et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2001)
Reactions of hydroxyl radicals on titania, silica, alumina, and gold surfaces
M Suh et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2000)