期刊
APPLIED SURFACE SCIENCE
卷 413, 期 -, 页码 219-232出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2017.03.260
关键词
Heteroepitaxy; CdTe; van der Waals; RHEED; Photoresponse
类别
资金
- US NSF [DMR-1305293]
- New York State Foundation of Science, Technology and Innovation (NYSTAR) through Focus Center-New York [C130117]
- Rensselaer
- NSF [CMMI1550941, CMMI 1635520]
- U.S. DOE, Office of Basic Sciences [DE-SC0012704]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1305293] Funding Source: National Science Foundation
Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (similar to 21-55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [121](cdTe)//[1100](cds)//[010](mica), respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. The use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications. (C) 2017 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据