4.7 Article

Inter-Layer Coupling Induced Valence Band Edge Shift in Mono-to Few-Layer MoS2

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SCIENTIFIC REPORTS
卷 7, 期 -, 页码 -

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NATURE RESEARCH
DOI: 10.1038/srep40559

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资金

  1. Center for the Computational Design of Functional Layered Materials, an Energy Frontier Research Center - US. Department of Energy, Office of Science, Basic Energy Sciences [SC0012575]
  2. U.S. Army Research Office [W911NF-15-1-0181]
  3. MIUR (Ministry of Education, Universities and Research of the Italian Government)
  4. Vaisala Foundation
  5. Singapore National Research Foundation [NRF-NRFF2013-03]
  6. US Department of Energy (DOE), Office of Science, Basic Energy Sciences [DEFG02-07ER46352]
  7. NERSC supercomputing center through DOE [DE-AC02-05CH11231]
  8. DOE EFRC: Center for the Computational Design of Functional Layered Materials (CCDM) [DE-SC0012575]

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Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and mu-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green's function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2.

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