期刊
SCIENTIFIC REPORTS
卷 7, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-017-13760-y
关键词
-
资金
- FAME
- MARCO
- DARPA
- SRC-FAME program
- Spanish Government [MAT2014-56063-C2-1-R, MAT2015-73839-JIN, MAT2017-85232-R]
- Generalitat de Catalunya [2014 SGR 734]
- Spanish Ministry of Economy and Competitiveness, through the Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0496]
- Spanish Ministry of Economy and Competitiveness of Spanish Government [IJCI-2014-19102]
- Consolidator Grant SPIN-PORICS'' from the European Research Council [648454]
- Laboratory Directed Research and Development (LDRD) Programs of ORNL
- Grant Agency of the Czech Republic [14-37427]
- NSF [1205734]
- NSF Partnerships for Research and Education in Materials (PREM)
- NSF under NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS) [1160504]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1205734] Funding Source: National Science Foundation
The ability to control a magnetic phase with an electric field is of great current interest for a variety of low power electronics in which the magnetic state is used either for information storage or logic operations. Over the past several years, there has been a considerable amount of research on pathways to control the direction of magnetization with an electric field. More recently, an alternative pathway involving the change of the magnetic state (ferromagnet to antiferromagnet) has been proposed. In this paper, we demonstrate electric field control of the Anomalous Hall Transport in a metamagnetic FeRh thin film, accompanying an antiferromagnet (AFM) to ferromagnet (FM) phase transition. This approach provides us with a pathway to hide or reveal a given ferromagnetic region at zero magnetic field. By converting the AFM phase into the FM phase, the stray field, and hence sensitivity to external fields, is decreased or eliminated. Using detailed structural analyses of FeRh films of varying crystalline quality and chemical order, we relate the direct nanoscale origins of this memory effect to site disorder as well as variations of the net magnetic anisotropy of FM nuclei. Our work opens pathways toward a new generation of antiferromagnetic - ferromagnetic interactions for spintronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据