期刊
APPLIED PHYSICS LETTERS
卷 110, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4986189
关键词
-
资金
- Fonds de Recherche du Quebec-Nature et Technologie (FRQNT)
- Natural Sciences and Engineering Research Council of Canada (NSERC)
Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients, and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this work, we monitor the oxidation dynamics of GaSe with thicknesses ranging from 10 to 200 nm using Raman spectroscopy. In ambient temperature and humidity conditions, the intensity of all Raman modes and the luminescence decrease rapidly with moderate exposure to above-gap illumination. Concurrently, several oxidation products appear in the Raman spectra: Ga2Se3, Ga2O3, and amorphous and crystalline selenium. We find that no safe measurement power exists for optical measurements on ultrathin GaSe in ambient conditions. We demonstrate that the simultaneous presence of oxygen, humidity, and above-gap illumination is required to activate this photo-oxidation process, which is attributed to the transfer of photogenerated charge carriers towards aqueous oxygen at the sample surface, generating highly reactive superoxide anions that rapidly degrade the sample and quench the optical response of the material. Published by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据