Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition

We report the synthesis of large-scale continuous MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD). As-grown thin films were composed of a continuous monolayer of MoSe2 and extended up to a millimeter scale. The CVD-grown monolayer MoSe2 films were uniform in thickness and highly crystalline with hexagonal crystal structures. Raman and photoluminescence spectra showed that CVD-grown monolayer MoSe2 films have similar vibrational and optical properties to those of mechanically exfoliated monolayer MoSe2. These results demonstrate that the CVD-grown monolayer MoSe2 films have reasonably high quality comparable to that of mechanically exfoliated monolayer MoSe2 flakes.