期刊
RSC ADVANCES
卷 7, 期 80, 页码 50781-50785出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ra09813h
关键词
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资金
- New Century Excellent Talents in the University of China [NCET-05-0111]
- International S&T Cooperation Program of China [2015DFR10970]
- National Natural Science Foundation of China [61774027, 61376050]
Simultaneous growth of different kinds of aligned GaN nanostructures (i.e., nanowires, needles, pyramids and micro-rods) on a single substrate was firstly realized at a low temperature of 790 degrees C by naturally changing the III/V ratio across the substrate via a coaxial pipeline configuration. The effects of substrate distance and growth pressure on nanostructure growth were investigated. The morphology variation from nanowires to micros-rods would be explained in terms of Ga species changing from the Ga element to GaN molecule in a hot-wall reactor. This work is helpful for on chip integration of different kinds of nanodevices on unusual substrates of low melting temperature.
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