Field emission properties of Al-doped ZnO nanosheet based on field emitter device with UV exposure

In this study, aluminum (Al)-doped zinc oxide (ZnO) nanosheets were synthesized on a ZnO/glass substrate under different growth temperatures using a modified aqueous solution method. The field emission and physical properties of Al-doped ZnO nanosheets were then investigated. Results indicated that high growth temperature improves the quality of Al-doped ZnO nanosheets. Moreover, the photoluminescence intensity of the sample's ultraviolet (UV) emission peak (growth temperature at 60 degrees C) was stronger compared with those of other samples. However, its broad, deep-level green emission band was weaker. The turn-on field and field enhancement factor (beta) of Al-doped ZnO nanosheets were 3.8 V mu m(-1) and 4760, respectively. The UV illumination of the Al-doped ZnO nanosheets decreased the turn-on electrical field from 3.8 to 3.3 V mu m(-1) and elevated the b from 4760 to 7501.