期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 23, 页码 20239-20246出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b05629
关键词
quantum dots; light-emitting diodes; additive; charge balance; morphology
资金
- National Key R&D Program of China [2016YFB0400700]
- Natural Science Foundation of China [61575136]
- Collaborative Innovation Center of Suzhou Nano Science and Technology (Nano-CIC)
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
A facile but effective method is proposed to improve the performance of quantum dot light-emitting diodes (QLEDs) by incorporating a polymer, poly(9-vinlycarbazole) (PVK), as an additive into the CdSe/CdS/ZnS quantum dot (QD) emitting layer (EML). It is found that the charge balance of the device with the PVK-added EML was greatly improved. In addition, the film morphology of the hole-transporting layer (HTL) which is adjacent to the EML, is substantially improved. The surface roughness of the HTL is reduced from 5.87 to 1.38 nm, which promises a good contact between the HTL and the EML, resulting in low leakage current. With the improved charge balance and morphology, a maximum external quantum efficiency (EQE) of 16.8% corresponding to the current efficiency of 19.0 cd/A is achievable in the red QLEDs. The EQE is 1.6 times as high as that (10.5%) of the reference QLED, comprising a pure QD EML. This work demonstrates that incorporating some polymer molecules into the QD EML as additives could be a facile route toward high-performance QLEDs.
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