Reproducible switching effect of an all-inorganic halide perovskite CsPbBr3 for memory applications

All-inorganic halide perovskite CsPbBr3 have been developed and investigated. We have further demonstrated the using of this stable all-inorganic halide perovskite as storage media in memristors. Reproducible typical bipolar resistance switching behaviors in two different structures of resistance random access memory devices (Pt/CsPbBr3/FTO and Pt/CsPbBr3/Cu2O/FTO) are observed. Particularly, the Pt/CsPbBr3/Cu2O/FTO device based on CsPbBr3/Cu2O heterojunction exhibits a remarkably high resistance switching effect with low set and reset voltages. Such appealing characteristics are comparable with those of frequently-used transition metal oxides perovskites like BaTiO3 and SrZrO3, etc. Possible conduction mechanisms are also proposed to understand the resistance switching behaviors of the studied devices.