期刊
ADVANCED FUNCTIONAL MATERIALS
卷 27, 期 21, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201700461
关键词
ferroelectric materials; flexible electronics; hafnia films; low-temperature processes; nonvolatile memory
类别
资金
- Nanoholdings LLC
- State of North Carolina
- National Science Foundation [ECCS-1542015]
- Army Research Office [W911NF-15-1-0593]
- Research Opportunity Grant by the UNC General Administration
Next-generation wearable electronics call for flexible nonvolatile devices for ubiquitous data storage. Thus far, only organic ferroelectric materials have shown intrinsic flexibility and processability on plastic substrates. Here, it is shown that by controlling the heating rate, ferroelectric hafnia films can be grown on plastic substrates. The resulting highly flexible capacitor with a film thickness of 30 nm yields a remnant polarization of 10 mu C cm(-2). Bending tests show that the film ferroelectricity can be retained under a bending radius below 8 mm with up to 1000 bending cycles. The excellent flexibility is due to the extremely thin hafnia film thickness. Using the ferroelectric film as a gate insulator, a low voltage nonvolatile vertical organic transistor is demonstrated on a plastic substrate with an extrapolated date retention time of up to 10 years.
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