期刊
ADVANCED MATERIALS
卷 29, 期 23, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201700400
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资金
- National Natural Science Foundation of China [61674075, 11274155, 51572120]
- National Basic Research 973 Program [2014CB921101, 2013CB632101, 2013CB932900]
- Jiangsu Excellent Young Scholar Program [BK20160020]
- Scientific and Technological Support Program in Jiangsu province [BE2014147-2]
- Jiangsu Shuangchuang Program
- Fundamental Research Funds for Central Universities
- Key Laboratory of Advanced Photonic and Electronic Materials
Inorganic CsPbX3 (X = Cl, Br, I, or hybrid among them) perovskite quantum dots (IPQDs) are promising building blocks for exploring high performance optoelectronic applications. In this work, the authors report a new hybrid structure that marries CsPbX3 IPQDs to silicon nanowires (SiNWs) radial junction structures to achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar-blind spectrum. A compact and uniform deployment of CsPbX3 IPQDs upon the sidewall of low-reflective 3D radial junctions enables a strong light field excitation and efficient down-conversion of the ultraviolet incidences, which are directly tailored into emission bands optimized for a rapid photodetection in surrounding ultrathin radial p-i-n junctions. A fast solar-blind UV detection has been demonstrated in this hybrid IPQD-NW detectors, with rise/fall response time scales of 0.48/1.03 ms and a high responsivity of 54 mA W-1@200 nm (or 32 mA W-1@270 nm), without the need of any external power supply. These results pave the way toward large area manufacturing of high performance Si-based perovskite UV detectors in a scalable and low-cost procedure.
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