期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 21, 页码 18127-18133出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b03785
关键词
2D molecular crystals; ferroelectric organic field-effect transistor memory; nonvolatile; high-speed organic transistor memory; solution processed
资金
- 973 projects [2013CBA01600, 2013CB932900]
- NSFC [61574074]
- Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects [61511140098]
Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted intensive attention because of their promising potential in nonvolatile memory devices. The quick switching between binary states is a significant fundamental feature in evaluating Fe-OFET memories. Here, we employ 2D molecular crystals via a solution-based process as the conducting channels in transistor devices, in which ferroelectric polymer acts as the gate dielectric. A high carrier mobility of up to 5.6 cm(2) V-1 s(1) and a high on/off ratio of 10(6) are obtained. In addition, the efficient charge injection by virtue of the ultrathin 2D molecular crystals is beneficial in achieving rapid operations in the Fe-OFETs; devices exhibit short switching time of similar to 2.9 and similar to 3.0 ms from the on- to the off-state and from the off- to the on-state, respectively. Consequently, the presented strategy is capable of speeding up Fe-OFET memory devices by using solution-processed 2D molecular crystals.
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