Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer

Searching for ferromagnetic (FM) van der Waals (vdW) heterostructures with high Curie temperature and multiple-band alignments is crucial to develop next-generation spintronic and optoelectronic nanodevices. Here, through first-principles methods, the FM vdW heterostructure is found for the first time in the Mg(OH)(2)/VS2 heterobilayer with high Curie temperature (385 K) and type-II alignment. The negative electric field induces the transition from type-II to type-III alignment in the spin-up channel. However, under the positive electric field, the type-II to type-I alignment transition occurs in the spin-up and spin-down channels. This work provides the possibilities of realizing the high-temperature FM vdW heterostructures and electrostatic gating dependent multiple-band alignments in practice.