期刊
GALLIUM NITRIDE MATERIALS AND DEVICES XII
卷 10104, 期 -, 页码 -出版社
SPIE-INT SOC OPTICAL ENGINEERING
DOI: 10.1117/12.2252036
关键词
III-nitrides; quantum wells; polar; non-polar; semi-polar; radiative recombination; excitons
Efficient radiative recombination is one of the key properties enabling high performance light emitting devices. We have performed an in-depth experimental analysis of radiative recombination in polar, nonpolar, and semipolar III-nitride quantum wells (QWs), which allows us to elucidate and quantify its mechanisms. We are able to distinguish between localized and free exciton recombination, we clearly see the effect of polarization fields via the quantum-confined Stark effect, and we observe the effect of the valence band structure associated with crystal orientation and strain.
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