期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 25, 页码 21322-21327出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b04374
关键词
wide-band-gap semiconductor; heterostructure; two-dimensional material; field-effect transistor; gallium oxide
资金
- National Research Foundation of Korea - Ministry of Science, ICT, and Future Planning of Korea [2016M3D1A1952967]
- New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) from the Ministry of Trade, Industry Energy, Korea [20163010012140]
- National Research Foundation of Korea [21A20131812182, 2016M3D1A1952967] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
beta-gallium oxide (beta-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of beta-Ga2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between beta-Ga2O3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.
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