期刊
CURRENT APPLIED PHYSICS
卷 17, 期 7, 页码 1005-1008出版社
ELSEVIER
DOI: 10.1016/j.cap.2017.03.018
关键词
2DHG; GaSb; Hole mobility; Lattice mismatch; III-V CMOS
资金
- KIST institutional program of flag-ship [2E27160]
We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm(2)/Vs and high carrier concentration of 4.3 x 10(12)/cm(2) at RT. (C) 2017 Published by Elsevier B. V.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据