4.6 Article

Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

期刊

APPLIED PHYSICS LETTERS
卷 110, 期 24, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4986452

关键词

-

资金

  1. National Natural Science Foundation of China [51402366, 61204091, 61404177, U1201254]
  2. Science and Technology Project of Guangdong Province, China [2015B010132006, 2016B090918106]
  3. Science and Technology Project of Guangzhou City, China [201505251254125]

向作者/读者索取更多资源

Various kinds of materials have been developed as transparent conductors for applications in semiconductor optoelectronic devices. However, there is a bottleneck that transparent conductive materials lose their transparency at ultraviolet (UV) wavelengths and could not meet the demands for commercial UV device applications. In this work, textured indium tin oxide (ITO) is grown and its potential to be used at UV wavelengths is explored. It is observed that the pronounced Burstein-Moss effect could widen the optical bandgap of the textured ITO to 4.7 eV. The average transmittance in UVA (315 nm-400 nm) and UVB (280 nm-315 nm) ranges is as high as 94% and 74%, respectively. The excellent optical property of textured ITO is attributed to its unique structural property. The compatibility of textured ITO thin films to the device fabrication is demonstrated on 368-nm nitride-based light emitting diodes, and the enhancement of light output power by 14.8% is observed compared to sputtered ITO. Published by AIP Publishing.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据