期刊
APPLIED PHYSICS LETTERS
卷 111, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4993569
关键词
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资金
- Office of Naval Research (EXEDE MURI) [N00014-12-1-0976]
- Department of the Defense
- Defense Threat Reduction Agency [HDTRA11710034]
- Ohio State University Institute of Materials Research (IMR) Multidisciplinary Team Building Grant
- Air Force Research Laboratory, WPAFB, Dayton Ohio
- U.S. Department of Defense (DOD) [HDTRA11710034] Funding Source: U.S. Department of Defense (DOD)
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the beta-(Al0.2Ga0.8)(2)O-3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)(2)O-3/Ga2O3 material system could enable heterojunction devices for high performance electronics. Published by AIP Publishing.
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