期刊
ADVANCED MATERIALS
卷 29, 期 26, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201700425
关键词
flexible; inorganic; resistive random access memory; semitransparent
类别
资金
- National Natural Science Foundation of China [51431006, 51472118]
- National Key Research Program of China [2016YFA0300101]
- Fundamental Research Funds for the Central Universities [30916011104]
- Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme
Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large-scale BaTi0.95Co0.05O3 (BTCO) film with a SrRuO3 (SRO) buffered layer on a 10 mu m thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500-800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive-switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25-180 degrees C or after being annealed at 500 degrees C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.
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