期刊
APPLIED SURFACE SCIENCE
卷 419, 期 -, 页码 758-763出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2017.05.066
关键词
Atomic layer deposition; Me2In(EDPA); In2O3; Oxide semiconductor
类别
资金
- Korea Research Institute of Chemical Technology [SI1703-02]
- National Research Council of Science & Technology (NST) by the Korea government (MSIP) [PCS-17-02-KIST]
- National Research Council of Science & Technology (NST), Republic of Korea [PCS-17-02-KIST, SI1703-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Indium oxide (In2O3) thin films were deposited by atomic layer deposition using dimethyl(N-ethoxy2,2-dirnethylcarboxylicpropanamide)indium (Me2In(EDPA)) and H2O as the In-precursor and reactant, respectively. The In2O3 films exhibited a saturated growth rate of 0.083 nm/cycle at a deposition temperature of 300 degrees C. Porous and amorphous films were grown at 150 degrees C, whereas dense polycrystalline films were deposited at higher deposition temperatures of 200-300 degrees C, XPS analysis revealed negligible carbon and nitrogen impurities incorporation within the films. The estimated bandgap of the In2O3 films by spectroscopic ellipsometry and UV-vis spectroscopy was about 3.7 eV and the increase in refractive index with deposition temperature from 150 to 300 degrees C indicated that dense films were grown at higher temperatures. The high transmittance (>94% in visible light) and good electrical properties (resistivity similar to 1.2-7 m Omega.cm, Hall mobility similar to 28-66 cm(2)/Vs) of the In2O3 films make them a viable option for optoelectronic applications. (C) 2017 Published by Elsevier B.V.
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