期刊
ADVANCED FUNCTIONAL MATERIALS
卷 27, 期 28, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201700338
关键词
all-inorganic perovskites; antisolvent vapor treatment; grain sizes; light-emitting diodes; low defects
类别
资金
- National Key Research and Development Program of China [2016YFA0202402]
- National Natural Science Foundation of China [91123005, 61674108, 11550110176]
- Doctoral Fund of Ministry of Education of China [2013320111020]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Collaborative Innovation Center of Suzhou Nano Science and Technology (NANO-CIC)
All-inorganic perovskite light-emitting diodes (LEDs) reveal efficient luminescence with high color purity, but their modest brightness and poor stability are still critical drawbacks. Here, the luminescent efficiency and the stability of perovskite LEDs (PeLEDs) are boosted by antisolvent vapor treatment of CsPbBr3 embedded in a dielectric polymer matrix of polyethylene oxide (PEO). A unique method is developed to obtain high quality CsPbBr3 emitting layers with low defects by controlling their grain sizes. CsPbBr3 in PEO matrix is post-treated with antisolvent of chloroform (CF), leading to micro-crystals with a size of approximate to 5 mu m along the in-plane direction with active emitting composite of 90%. A device based on CF post-treatment (CsPbBr3-PEO-CF) film displays a brightness of up to 51890 cd m(-2) with an external quantum efficiency of 4.76%. CsPbBr3-PEO-CF PeLED still maintains 82% of its initial efficiency after 80 h continuous operation in ambient air, which indicates relatively good device stability. This work highlights that film quality is not only key to promoting fluorescence in CsPbBr3, but also to achieving higher performance PeLEDs.
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