期刊
MATERIALS
卷 10, 期 8, 页码 -出版社
MDPI
DOI: 10.3390/ma10080862
关键词
metal-insulator transition; disorder; Anderson insulator; electron localization; phase-change materials
类别
资金
- Youth Thousand Talents Program of China
- Young Talent Support Plan of Xi'an Jiaotong University
- ERC [340698]
- International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies of Xi'an Jiaotong University
- [SFB 917]
- European Research Council (ERC) [340698] Funding Source: European Research Council (ERC)
Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge1Sb2Te4 (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.
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