期刊
CERAMICS INTERNATIONAL
卷 43, 期 11, 页码 8391-8395出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2017.03.182
关键词
Films; Electrical properties; TiO2
资金
- National Natural Science Foundation of China [51472149]
Titanium dioxide (TiO2) films doped with different indium (In) concentrations have been prepared on SrTiO3 (STO) substrates by high vacuum metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) analyses revealed the TiO2 films doped with low In concentrations to be [001] oriented anatase phase and the films with high In concentrations to present polycrystalline structures. The 1.8% In-doped TiO2 film exhibited the best electrical conductivity properties with the lowest resistivity of 8.68x 10(-2) Omega cm, a Hall mobility of 10.9 cm(2) V-1 s(-1) and a carrier concentration of 6.5x10(18) cm(-3). The films showed excellent transparency with average transmittances of over 85% in the visible range.
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