期刊
BEILSTEIN JOURNAL OF NANOTECHNOLOGY
卷 8, 期 -, 页码 1642-1648出版社
BEILSTEIN-INSTITUT
DOI: 10.3762/bjnano.8.164
关键词
doping; electronic behavior; germanane; two-dimensional materials
资金
- NSF [EFRI-1433467]
- Center for Emergent Materials: an NSF MRSEC [DMR-1420451]
- Camille and Henry Dreyfus Foundation
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1433467] Funding Source: National Science Foundation
Germanane, a hydrogen-terminated graphane analogue of germanium has generated interest as a potential 2D electronic material. However, the incorporation and retention of extrinsic dopant atoms in the lattice, to tune the electronic properties, remains a significant challenge. Here, we show that the group-13 element Ga and the group-15 element As, can be successfully doped into a precursor CaGe2 phase, and remain intact in the lattice after the topotactic deintercalation, using HCl, to form GeH. After deintercalation, a maximum of 1.1% As and 2.3% Ga can be substituted into the germanium lattice. Electronic transport properties of single flakes show that incorporation of dopants leads to a reduction of resistance of more than three orders of magnitude in H2O-containing atmosphere after As doping. After doping with Ga, the reduction is more than six orders of magnitude, but with significant hysteretic behavior, indicative of water-activation of dopants on the surface. Only Ga-doped germanane remains activated under vacuum, and also exhibits minimal hysteretic behavior while the sheet resistance is reduced by more than four orders of magnitude. These Ga-and As-doped germanane materials start to oxidize after one to four days in ambient atmosphere. Overall, this work demonstrates that extrinsic doping with Ga is a viable pathway towards accessing stable electronic behavior in graphane analogues of germanium.
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