期刊
ADVANCED ENERGY MATERIALS
卷 7, 期 20, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201701038
关键词
blocking ion migration; dimensional engineering; energy level alignment; enhanced stability; reduced interfacial charge recombination
类别
资金
- HK-RGC General Research Funds [16312216, 16300915]
- HK Innovation and Technology Fund [ITS/004/14]
2D halide perovskite materials have shown great advantages in terms of stability when applied in a photovoltaic device. However, the impediment of charge transport within the layered structure drags down the device performance. Here for the first time, a 3D-2D (MAPbI(3)-PEA(2)Pb(2)I(4)) graded perovskite interface is demonstrated with synergistic advantages. In addition to the significantly improved ambient stability, this graded combination modifies the interface energy level in such a way that reduces interface charge recombination, leading to an ultrahigh V-oc at 1.17 V, a record for NiO-based p-i-n photovoltaic devices. Moreover, benefiting from the graded structure induced continuously upshifts energy level, the photovoltaic device attains a high Jsc of 21.80 mA cm(-2) and a high fill factor of 0.78, resulting in an overall power conversion efficiency (PCE) of 19.89%. More importantly, it is showed that such a graded interface structure also suppresses ion migration in the device, accounting for its significantly enhanced thermal stability.
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