Atomically Thin Mesoporous In2O3-x/In2S3 Lateral Heterostructures Enabling Robust Broadband-Light Photo-Electrochemical Water Splitting

Atomically thin 2D heterostructures have opened new realms in electronic and optoelectronic devices. Herein, 2D lateral heterostructures of mesoporous In2O3-x/In2S3 atomic layers are synthesized through the in situ oxidation of In2S3 atomic layers by an oxygen plasma-induced strategy. Based on experimental observations and theoretical calculations, the prolonged charge carrier lifetime and increased electron density reveal the efficient photoexcited carrier transport and separation in the In2O3-x/In2S3 layers by interfacial bonding at the atomic level. As expected, the synergistic structural and electronic modulations of the In2O3-x/In2S3 layers generate a photocurrent of 1.28 mA cm(-2) at 1.23 V versus a reversible hydrogen electrode, nearly 21 and 79 times higher than those of the In2S3 atomic layers and bulk counterpart, respectively. Due to the large surface area, abundant active sites, broadband-light harvesting ability, and effective charge transport pathways, the In2O3-x/In2S3 layers build efficient pathways for photoexcited charge in the 2D semiconductive channels, expediting charge transport and kinetic processes and enhancing the robust broadband-light photo-electrochemical water splitting performance. This work paves new avenues for the exploration and design of atomically thin 2D lateral heterostructures toward robust photo-electrochemical applications and solar energy utilization.