期刊
2D MATERIALS
卷 4, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aa7b03
关键词
scanning tunneling microscopy/spectroscopy; Van der Waals heterostructures; Schottky-Mott model; Schottky barrier height; graphene; TMD
资金
- EC Graphene Flagship project [604391]
- European Research Council (MOMB project) [320590]
- CEA within the 2D FACTORY project
- Agence Nationale de la Recherche within the ANR MoS2ValleyControl
- ANR J2D projects
We have investigated the electronic properties of two-dimensional (2D) transition metal dichalcogenides (TMDs), namely trilayer WSe2 and monolayer MoSe2, deposited on epitaxial graphene on silicon carbide, by using scanning tunneling microscopy and spectroscopy (STM/STS) in ultra-high vacuum. Depending on the number of graphene layers below the TMD flakes, we identified variations in the electronic dI/dV(V) spectra measured by the STM tip: the most salient feature is a rigid shift of the TMD spectra (i.e. of the different band onset positions) towards occupied states by about 120 mV when passing from bilayer to monolayer underlying graphene. Since both graphene phases are metallic and present a work function difference in the same energy range, our measurements point towards the absence of Fermi-level pinning for such van der Waals 2D TMD/Metal heterojunctions, following the prediction of the Schottky-Mott model.
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