Refractive index sensing based on semiconductor nanowire lasers

We demonstrate a refractive index (RI) sensor based on semiconductor nanowire lasers. It is shown that the TE01 mode is responsible for lasing and sensing with the lasing threshold of 3 mu J/mm(2) and the lasing peak width as narrow as 0.22 nm. A RI sensitivity of 21.2 nm/RIU (refractive index units), a figure of merit of approximately 100, and an RI detection limit of 1.4 x 10(-3) RIU are achieved. Published by AIP Publishing.