期刊
APPLIED PHYSICS LETTERS
卷 111, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4995399
关键词
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资金
- ARO [W911NF16-1-0268]
- ATT Foundation
- DOE NNSA SSAA [DE-NA0002927]
Hexagonal boron nitride (h-BN) detectors have demonstrated the highest thermal neutron detection efficiency to date among solid-state neutron detectors at about 51%. We report here the realization of h-BN neutron detectors possessing one order of magnitude enhancement in the detection area but maintaining an equal level of detection efficiency of previous achievement. These 3mm x 3mm detectors were fabricated from 50 mu m thick freestanding and flexible B-10 enriched h-BN (h-(BN)-B-10) films, grown by metal organic chemical vapor deposition followed by mechanical separation from sapphire substrates. Mobility-lifetime results suggested that holes are the majority carriers in unintentionally doped h-BN. The detectors were tested under thermal neutron irradiation from californium-252 (Cf-252) moderated by a high density polyethylene moderator. A thermal neutron detection efficiency of similar to 53% was achieved at a bias voltage of 200 V. Conforming to traditional solid-state detectors, the realization of h-BN epilayers with enhanced electrical transport properties is the key to enable scaling up the device sizes. More specifically, the present results revealed that achieving an electrical resistivity of greater than 10(14) Omega.cm and a leakage current density of below 3 x 10(-10) A/cm(2) is needed to fabricate large area h-BN detectors and provided guidance for achieving high sensitivity solid state neutron detectors based on h-BN. Published by AIP Publishing.
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