Tailoring the thermal and electrical transport properties of graphene films by grain size engineering

Understanding the influence of grain boundaries (GBs) on the electrical and thermal transport properties of graphene films is essentially important for electronic, optoelectronic and thermoelectric applications. Here we report a segregation-adsorption chemical vapour deposition method to grow well-stitched high-quality monolayer graphene films with a tunable uniform grain size from similar to 200 nm to similar to 1 mu m, by using a Pt substrate with medium carbon solubility, which enables the determination of the scaling laws of thermal and electrical conductivities as a function of grain size. We found that the thermal conductivity of graphene films dramatically decreases with decreasing grain size by a small thermal boundary conductance of similar to 3.8 x 10(9) Wm(-2) K-1, while the electrical conductivity slowly decreases with an extraordinarily small GB transport gap of similar to 0.01 eV and resistivity of similar to 0.3 k Omega mu m. Moreover, the changes in both the thermal and electrical conductivities with grain size change are greater than those of typical semiconducting thermoelectric materials.