期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 31, 页码 26549-26555出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b06025
关键词
transparent conducting oxides; oxide heterojunctions; electronic structure; band offset; photocatalysis; NiO; perovskite oxide
资金
- Herchel Smith Postdoctoral Fellowship by the University of Cambridge
- EPSRC grant [EP/N004272/1]
- Royal Society [UF100105, UF150693]
- Early Career Research Program through the U.S. Department of Energy, Office of Basic Energy Sciences, Materials Science and Engineering Division
- EPSRC [EP/N004272/1, EP/H047867/1, EP/P027032/1, EP/L011700/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H047867/1, EP/P027032/1, EP/L011700/1, EP/N004272/1] Funding Source: researchfish
Understanding the energetics at the interface, including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multifunctionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the heterointerface of wide-band-gap p-type NiO and n-type SrTiO3 (STO). We show that despite a large lattice mismatch (similar to 7%) and dissimilar crystal structure, high-quality NiO and Li-doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain-matching epitaxy mechanism. X-ray photoelectron spectroscopy studies indicate that NiO/STO heterojunctions form a type II staggered band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb-doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit not only a large rectification ratio of 2 X 10(3) but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implications for applications in photocatalysis and photodetectors as the interface provides favorable energetics for facile separation and transport of photogenerated electrons and holes.
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