期刊
NATURE COMMUNICATIONS
卷 8, 期 -, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/s41467-017-00722-1
关键词
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资金
- Spanish Ministry of Economy and Competitiveness, through Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0522]
- Fundacio Cellex Barcelona
- CERCA Programme / Generalitat de Catalunya
- European Union H2020 Programme [696656]
- Spanish Ministry of Economy and Competitiveness (MINECO)
- Fondo Europeo de Desarrollo Regional (FEDER) [MAT2014-56210-R]
- AGAUR under SGR grant [2014SGR1548]
Two-dimensional transition metal dichalcogenide-based photodetectors have demonstrated potential for the next generation of 2-dimensional optoelectronics. However, to date, their sensitivity has not been superior to that of other technologies. Here we report an ultrasensitive two-dimensional photodetector employing an in-plane phototransistor with an out-of-plane vertical MoS2 p-n junction as a sensitizing scheme. The vertical built-in field is introduced for the first time in the transport channel of MoS2 phototransistors by facile chemical surface doping, which separates the photo-excited carriers efficiently and produces a photoconductive gain of > 10(5) electrons per photon, external quantum efficiency greater than 10%, responsivity of 7 x 10(4)AW(-1), and a time response on the order of tens of ms. This taken together with a very low noise power density yields a record sensitivity with specific detectivity D* of 3.5 x 10(14) Jones in the visible and a broadband response up to 1000 nm.
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